PHOTOCAPACITANCE MEASUREMENTS ON DEEP LEVELS IN GAAS UNDER HYDROSTATIC-PRESSURE

被引：27
|
作者：
WHITE, AM
PORTEOUS, P
SHERMAN, WF
STADTMULLER, AA
机构：
[1] ROYAL RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
[2] UNIV LONDON,KINGS COLL,LONDON WC2R 2LS,ENGLAND
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 17期
关键词：
D O I：
10.1088/0022-3719/10/17/002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：L473 / L476
页数：4
相关论文
共 50 条
  • [1] DEEP TRAPS IN GAAS UNDER HYDROSTATIC-PRESSURE
    KUMAGAI, O
    WUNSTEL, K
    JANTSCH, W
    SOLID STATE COMMUNICATIONS, 1982, 41 (01) : 89 - 92
  • [2] DEEP IMPURITY LEVELS IN SILICON UNDER HYDROSTATIC-PRESSURE
    XIA, JB
    CHINESE PHYSICS, 1985, 5 (02): : 471 - 477
  • [3] QUANTUM WELLS AND DEEP IMPURITY LEVELS UNDER HYDROSTATIC-PRESSURE
    CHANDRASEKHAR, M
    CHANDRASEKHAR, HR
    KANGARLU, A
    VENKATESWARAN, U
    CHAMBERS, FA
    MEESE, JM
    SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (01) : 107 - 114
  • [4] PHOTOLUMINESCENCE OF GAAS/SI UNDER HYDROSTATIC-PRESSURE
    BEERENS, J
    BERNIER, G
    JANDL, S
    DEBOECK, J
    DENEFFE, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 1156 - 1158
  • [5] DONOR STATES IN GAAS UNDER HYDROSTATIC-PRESSURE
    LIU, X
    SAMUELSON, L
    PISTOL, ME
    GERLING, M
    NILSSON, S
    PHYSICAL REVIEW B, 1990, 42 (18): : 11791 - 11800
  • [6] DONOR SPECTROSCOPY IN GAAS UNDER HYDROSTATIC-PRESSURE
    GERLING, M
    LIU, X
    NILSSON, S
    PISTOL, ME
    SAMUELSON, L
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (04) : 257 - 259
  • [7] DEEP LEVELS IN SEMICONDUCTORS - INFLUENCE OF HYDROSTATIC-PRESSURE
    JANTSCH, W
    WUNSTEL, K
    KUMAGAI, O
    VOGL, P
    PHYSICA B & C, 1983, 117 (MAR): : 188 - 190
  • [8] RESONANT RAMAN STUDY OF GAAS UNDER HYDROSTATIC-PRESSURE
    YU, PY
    WELBER, B
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 316 - 316
  • [9] GAAS-ALAS HETEROJUNCTIONS UNDER HYDROSTATIC-PRESSURE
    BEERENS, J
    GREGORIS, G
    LAVIELLE, D
    BENAMOR, S
    PORTAL, JC
    ALEXANDRE, F
    CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 311 - 314
  • [10] DEEP LEVELS RELATED TO TRANSITION-METALS IN SI UNDER HYDROSTATIC-PRESSURE
    WUNSTEL, K
    KUMAGAI, O
    WAGNER, P
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04): : 251 - 256
12345