共 50 条
- [2] HYDROSTATIC-PRESSURE DEPENDENCIES OF DEEP IMPURITY LEVELS IN ZINCBLENDE SEMICONDUCTORS PHYSICAL REVIEW B, 1988, 38 (17): : 12549 - 12555
- [3] RESONANT AND DEEP IMPURITY LEVELS UNDER HYDROSTATIC-PRESSURE IN PURE N-TYPE INAS PHYSICA B & C, 1986, 139 (1-3): : 426 - 428
- [4] PHOTOCAPACITANCE MEASUREMENTS ON DEEP LEVELS IN GAAS UNDER HYDROSTATIC-PRESSURE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (17): : L473 - L476
- [6] INFLUENCE OF HYDROSTATIC-PRESSURE ON THE PLATINUM LEVELS IN SILICON PHYSICAL REVIEW B, 1986, 33 (12): : 8892 - 8895
- [7] DEEP LEVELS IN SEMICONDUCTORS - INFLUENCE OF HYDROSTATIC-PRESSURE PHYSICA B & C, 1983, 117 (MAR): : 188 - 190
- [8] THE EFFECT OF HYDROSTATIC-PRESSURE ON SHALLOW AND DEEP IMPURITY STATES IN SEMICONDUCTORS HELVETICA PHYSICA ACTA, 1983, 56 (1-3): : 331 - 346
- [10] DEEP LEVELS RELATED TO TRANSITION-METALS IN SI UNDER HYDROSTATIC-PRESSURE APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04): : 251 - 256