Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon

被引：0

作者：

O. V. Aleksandrov

N. N. Afonin

机构：

[1] a Closed Joint-Stock Company,Svetlana

[2] Voronezh State Pedagogical University,Poluprovodniki

来源：

Semiconductors | 1998年 / 32卷

关键词：

Oxidation; Silicon; Experimental Data; Phosphorus; Mass Transfer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A model of diffusion-segregation impurity redistribution in the system SiO2-Si during the thermal oxidation of silicon is developed, taking into account the nonequilibrium character of the segregation process at the moving phase boundary. The temperature dependence of the mass transfer of phosphorus and its mass-transfer coefficient at the SiO2-Si interface are determined by the numerical analysis of experimental data.

引用

页码：15 / 18

页数：3

共 50 条

[21] ROOM-TEMPERATURE CONDUCTIVITY AND LOCATION OF MOBILE SODIUM IONS IN THERMAL SILICON DIOXIDE LAYER OF A METAL-SILICON DIOXIDE-SILICON STRUCTURE
DIMARIA, DJ
JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5149 - 5151
[22] DOPING OF PHOSPHORUS INTO SILICON DIOXIDE
NISHIMAT.S
TOKUYAMA, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : C212 - &
[23] Using Optical Methods to Reveal Structural Features in Porous Nanocomposite Films of the Tin Dioxide-Silicon Dioxide System
Ponomareva, A. A.
Moshnikov, V. A.
Suchaneck, G.
TECHNICAL PHYSICS LETTERS, 2011, 37 (10) : 892 - 895
[24] HYDROGEN ADSORPTION STATES AT THE EXTERNAL AND INTERNAL PALLADIUM SURFACES OF A PALLADIUM-SILICON DIOXIDE-SILICON STRUCTURE
PETERSSON, LG
DANNETUN, HM
FOGELBERG, J
LUNDSTROM, I
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 404 - 413
[25] HALL-EFFECT ANALYSIS OF CHARGE TRANSPORT IN SILICON DIOXIDE-SILICON NITRIDE DOUBLE-LAYERS
HIRAIWA, A
YUGAMI, J
IHJIMA, S
KUSAKA, T
OHJI, Y
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2386 - 2386
[26] Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary
Tarnavsky, GA
Shpak, SI
Obrecht, MS
JETP LETTERS, 2001, 73 (09) : 474 - 478
[27] SILICON-SILICON DIOXIDE SYSTEM
GRAY, PV
PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1543 - +
[28] Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary
G. A. Tarnavsky
S. I. Shpak
M. S. Obrecht
Journal of Experimental and Theoretical Physics Letters, 2001, 73 : 474 - 478
[29] High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy
Dept. of Mat. Sci. and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United States
不详
Appl Phys Lett, 14 (2186-2188):
[30] THE MASKING OF PHOSPHORUS PENTOXIDE BY SILICON DIOXIDE
FLINT, PS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) : C261 - C261

← 1 2 3 4 5 →