Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary

被引：0
|
作者：
G. A. Tarnavsky
S. I. Shpak
M. S. Obrecht
机构：
[1] Russian Academy of Sciences,Institute of Theoretical and Applied Mechanics, Siberian Division
[2] University of Waterloo,Siborg System Inc.
来源：
Journal of Experimental and Theoretical Physics Letters | 2001年 / 73卷
关键词：
68.35.Dv; 66.30.Jt;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Based on computer simulation of the physicochemical segregation processes involving dopants implanted into a host material (silicon), the details of boron injection were investigated for four types of angular configurations (direct and inverse kinks and cavities of the “trench” and “square” types) of the “silicon/silicon dioxide” oxidation boundary. A complicated picture of the B distribution inside the Si and SiO2 regions and at the SiO2/Si front was obtained and analyzed in general terms.
引用
收藏
页码：474 / 478
页数：4
相关论文
共 50 条
  • [1] Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary
    Tarnavsky, GA
    Shpak, SI
    Obrecht, MS
    JETP LETTERS, 2001, 73 (09) : 474 - 478
  • [2] Features of Segregation of Doping Impurities of V(a) Subgroup Elements on Angular Configurations of the Silicon/Silicon Dioxide Oxidation Boundary
    G. A. Tarnavskii
    S. I. Shpak
    M. S. Obrecht
    Journal of Engineering Physics and Thermophysics, 2002, 75 (1) : 190 - 197
  • [3] PROPERTIES OF BORON IMPLANTED SILICON DIOXIDE
    WOLKENBERG, A
    WASILEWSKA, B
    APPLIED SURFACE SCIENCE, 1979, 3 (01) : 83 - 87
  • [4] Studies of boron segregation to {311} defects in silicon-implanted silicon
    Xia, J
    Saito, T
    Kim, R
    Aoki, T
    Kamakura, Y
    Taniguchi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2319 - 2323
  • [5] PROPERTIES OF SILICON IMPLANTED WITH BORON IONS THROUGH THERMAL SILICON DIOXIDE
    BAUER, LO
    MACPHERSON, MR
    ROBINSON, AT
    DILL, HG
    SOLID-STATE ELECTRONICS, 1973, 16 (03) : 289 - +
  • [6] THE DIFFUSION OF ION-IMPLANTED BORON IN SILICON DIOXIDE
    NG, J
    GIBBONS, JF
    SIGMON, T
    AIP CONFERENCE PROCEEDINGS, 1984, (122) : 20 - 33
  • [7] Effect of Thermal Oxidation on the Segregation of Phosphorus Implanted into Silicon
    O. V. Aleksandrov
    N. N. Afonin
    Inorganic Materials, 2005, 41 : 972 - 980
  • [8] Effect of thermal oxidation on the segregation of phosphorus implanted into silicon
    Aleksandrov, OV
    Afonin, NN
    INORGANIC MATERIALS, 2005, 41 (09) : 972 - 980
  • [9] THERMODYNAMICS ON BORON REJECTION DURING METALLURGICAL GRADE SILICON OXIDATION BY SILICON DIOXIDE
    Li, Yaqiong
    Tan, Yi
    Li, Jiayan
    Wu, Shenrui
    Liu, Yao
    EPD CONGRESS 2012, 2012, : 529 - 536
  • [10] IMPLANTED BORON PROFILES IN SILICON
    BEHAR, M
    WEISER, M
    KALBITZER, S
    FINK, D
    GRANDE, FL
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 34 (03): : 316 - 320
12345