Boron implanted in silicon: Segregation at angular configurations of the silicon/silicon dioxide oxidation boundary

被引：0
|
作者：
G. A. Tarnavsky
S. I. Shpak
M. S. Obrecht
机构：
[1] Russian Academy of Sciences,Institute of Theoretical and Applied Mechanics, Siberian Division
[2] University of Waterloo,Siborg System Inc.
来源：
Journal of Experimental and Theoretical Physics Letters | 2001年 / 73卷
关键词：
68.35.Dv; 66.30.Jt;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Based on computer simulation of the physicochemical segregation processes involving dopants implanted into a host material (silicon), the details of boron injection were investigated for four types of angular configurations (direct and inverse kinks and cavities of the “trench” and “square” types) of the “silicon/silicon dioxide” oxidation boundary. A complicated picture of the B distribution inside the Si and SiO2 regions and at the SiO2/Si front was obtained and analyzed in general terms.
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页码：474 / 478
页数：4
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