ISOTHERMAL ANNEALING OF BORON IMPLANTED SILICON

被引：3
|
作者：
PETERSTR.S [1 ]
HOLMEN, G [1 ]
机构：
[1] CHALMERS UNIV TECHNOL,DEPT PHYS,S-40220 GOTHENBURG 5,SWEDEN
来源：
PHYSICA SCRIPTA | 1974年 / 10卷 / 03期
关键词：
D O I：
10.1088/0031-8949/10/3/009
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：142 / 144
页数：3
相关论文
共 50 条
  • [1] ISOTHERMAL ANNEALING OF ARSENIC-IMPLANTED SILICON
    CAPPELLANI, F
    RESTELLI, G
    SPINONI, L
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03): : L50 - L53
  • [2] FLAME ANNEALING OF ARSENIC AND BORON IMPLANTED SILICON
    NARAYAN, J
    YOUNG, RT
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 466 - 468
  • [3] LASER ANNEALING OF BORON-IMPLANTED SILICON
    YOUNG, RT
    WHITE, CW
    CLARK, GJ
    NARAYAN, J
    CHRISTIE, WH
    MURAKAMI, M
    KING, PW
    KRAMER, SD
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141
  • [4] IONIZATION ASSISTED ANNEALING OF BORON IMPLANTED SILICON
    RZEWUSKI, H
    SUSKI, J
    KRYNICKI, J
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 39 (02): : 123 - 125
  • [5] FLASH - LAMP ANNEALING OF BORON IMPLANTED SILICON
    GAIDUK, PI
    KOMAROV, FF
    PILIPENKO, VA
    SOLOVYEV, VS
    STERZHANOV, NI
    [J]. RADIATION EFFECTS LETTERS, 1984, 86 (06): : 205 - 211
  • [6] RAPID ISOTHERMAL ANNEALING OF BORON ION-IMPLANTED JUNCTIONS
    LASKY, JB
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 6009 - 6018
  • [7] CW LASER ANNEALING OF BORON IMPLANTED POLYCRYSTALLINE SILICON
    PETERSTROM, S
    HOLMEN, G
    ALESTIG, G
    [J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 339 - 344
  • [8] PROLONGED AND RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON
    PETER, CR
    DESOUZA, JP
    HASENACK, CM
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2696 - 2699
  • [9] EFFECT OF THE ANNEALING AMBIENT ON THE REDISTRIBUTION OF BORON IMPLANTED INTO SILICON
    BURENKOV, AF
    KOMAROV, FF
    KURYAZOV, VD
    TEMKIN, MM
    [J]. SOVIET MICROELECTRONICS, 1988, 17 (03): : 144 - 148
  • [10] THE ANNEALING OF MEV ENERGY BORON IONS IMPLANTED INTO SILICON
    LU, WX
    QIAN, YH
    LU, DT
    WANG, ZL
    [J]. VACUUM, 1989, 39 (2-4) : 223 - 226
12345