Influence of dislocations on the process of pore formation in n-InP (111) single crystals

被引：0
|
作者：
Y. A. Suchikova
V. V. Kidalov
G. A. Sukach
机构：
[1] Berdyansk State Pedagogical University,
[2] National University of Bioresources and Nature Management,undefined
来源：
Semiconductors | 2011年 / 45卷
关键词：
Dislocation Density; Porous Layer; Pore Formation; Scan Ning Electron Microscopy; Indium Phosphide;
D O I：
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中图分类号：
学科分类号：
摘要：
Using scanning electron microscopy, the influence of dislocations on the mechanism of pore formation during electrolytic etching of single-crystal InP is shown. During studying of the nanostructure of porous layers, the features of mechanisms of pore formation in the n-InP samples are established. It is shown that they are caused by outcrop of dislocations on the (111) surface and pore growth both along the surface and perpendicularly to it. The dislocation density in the places of an increased impurity concentration is calculated.
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页码：121 / 124
页数：3
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