CMP Challenges for Advanced Technology Nodes

被引:8
|
作者
John H. Zhang
Haigou Huang
Andrew M. Greene
Ruilong Xie
Soon-Cheon Seo
Pietro Montanini
Wei-Tsu Tseng
Stan Tsai
Matthew Malley
Qiang Fang
Raghuveer Patlolla
Dinesh Koli
Dechao Guo
Donald F. Canaperi
Charan Surisetty
Jean E. Wynne
Walter Kleemeier
Cathy Labelle
机构
[1] Albany Nanotechnology Center,Globalfoundries
[2] Globalfoundries,IBM Research
[3] Albany Nanotechnology Center,undefined
关键词
D O I
10.1557/adv.2017.366
中图分类号
学科分类号
摘要
The CMP challenges for advanced technology nodes are discussed. Global and local uniformity challenges and their cumulative effects are presented. Uniformity improvements for advanced node integration were achieved through slurry, pad and platen optimization, innovative integration schemes, the reduction of incoming variation and the reduction of cumulative effects. We discuss reduction of typical CMP defect types. Defects resulting from simple mechanisms (foreign material, polish residues) and those resulting from chemical and physical interactions (corrosion, chemical attack, scratches, physical migration) and strategies for control are studied. Defectivity reduction measures include new post-CMP clean chemicals, new slurries and pads and reduction of incoming defectivity. Finally we discuss an observed tradeoff between good defectivity and good uniformity.
引用
收藏
页码:2361 / 2372
页数:11
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