Sulfonated polyaniline/n-type silicon junctions

被引：0
|
作者：
Wilson J. da Silva
Ivo A. Hümmelgen
Regina M. Q. Mello
机构：
[1] Universidade Federal do Paraná,Group of Organic Optoelectronic Devices, Departamento de Física
[2] Universidade Federal do Paraná,Departamento de Química
来源：
Journal of Materials Science: Materials in Electronics | 2009年 / 20卷
关键词：
Polyaniline; Ohmic Contact; Organic Semiconductor; Hybrid Device; Large Area Device;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Sulfonated polyaniline thin films are deposited on n-type silicon substrates at a rate of 1.2 nm/h. The sulfonated polyaniline/n-Si junctions were characterized by current–voltage and capacitance–voltage measurements and present Schottky barrier behavior with an energy barrier ranging from 0.9 to 1.3 eV, depending on sulfonated polyaniline film thickness and method.
引用
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页码：123 / 126
页数：3
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