Sulfonated polyaniline/n-type silicon junctions

被引：0
|
作者：
Wilson J. da Silva
Ivo A. Hümmelgen
Regina M. Q. Mello
机构：
[1] Universidade Federal do Paraná,Group of Organic Optoelectronic Devices, Departamento de Física
[2] Universidade Federal do Paraná,Departamento de Química
来源：
Journal of Materials Science: Materials in Electronics | 2009年 / 20卷
关键词：
Polyaniline; Ohmic Contact; Organic Semiconductor; Hybrid Device; Large Area Device;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Sulfonated polyaniline thin films are deposited on n-type silicon substrates at a rate of 1.2 nm/h. The sulfonated polyaniline/n-Si junctions were characterized by current–voltage and capacitance–voltage measurements and present Schottky barrier behavior with an energy barrier ranging from 0.9 to 1.3 eV, depending on sulfonated polyaniline film thickness and method.
引用
收藏
页码：123 / 126
页数：3
相关论文
共 50 条
  • [31] INFLUENCE OF COMPENSATION ON MAGNETORESISTANCE OF N-TYPE SILICON
    VOLKOV, BA
    GINODMAN, VB
    ZHURKIN, BG
    SPIRIN, SA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1128 - 1130
  • [32] MAGNETORESISTANCE OF DEGENERATE N-TYPE GERMANIUM AND SILICON
    ANDRIANOV, DG
    FISTUL, VI
    SOVIET PHYSICS-SOLID STATE, 1963, 5 (05): : 1077 - 1079
  • [33] Dynamics of negative muonium in n-type silicon
    Hitti, B
    Kreitzman, SR
    Estle, TL
    Bates, ES
    Dawdy, MR
    Head, TL
    Lichti, RL
    PHYSICAL REVIEW B, 1999, 59 (07): : 4918 - 4924
  • [34] INTERPRETATION OF MAGNETOCONDUCTIVITY IN N-TYPE GERMANIUM AND SILICON
    KEYES, RW
    PHYSICAL REVIEW, 1958, 111 (01): : 34 - 35
  • [35] Fast macropore growth in n-type silicon
    Cojocaru, Ala
    Carstensen, Juergen
    Ossei-Wusu, Emmanuel K.
    Leisner, Malte
    Riemenschneider, Oliver
    Foell, Helmut
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 7, 2009, 6 (07): : 1571 - 1574
  • [36] POLARIZATION OF HELICONS IN N-TYPE SILICON AND GERMANIUM
    WALLACE, PR
    CANADIAN JOURNAL OF PHYSICS, 1966, 44 (02) : 442 - &
  • [37] MAGNETORESISTANCE OF HEAVILY DOPED N-TYPE SILICON
    BALKANSK.M
    GEISMAR, A
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 554 - &
  • [38] Cathodoluminescence imaging of n-type porous silicon
    Itoh, M
    Yamamoto, N
    Takemoto, K
    Nittono, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (08): : 4182 - 4186
  • [39] DIVACANCIES PRODUCTION IN IRRADIATED N-TYPE SILICON
    AWADELKARIM, OO
    PHYSICA B & C, 1988, 150 (03): : 312 - 318
  • [40] Electrochemical and photoelectrochemical etching of n-type silicon
    Lee, CW
    Kim, DI
    Kim, BS
    Min, NK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S365 - S368
12345