A Study of Moisture Effects on Ti/Porous Silicon/Silicon Schottky Barrier

被引：0

作者：

V. Strikha

V. Skryshevsky

V. Polishchuk

E. Souteyrand

J.R. Martin

机构：

[1] Kiev National Shevchenko University,Radiophysics Department

[2] Ecole Centrale de Lyon,undefined

来源：

Journal of Porous Materials | 2000年 / 7卷

关键词：

porous Si; Schottky barrier; moisture sensor;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Results of capacitance-voltage and current-voltage measurements performed on Ti/porous silicon (PS)/p-Si diode structures are presented. A 5–10 increase of conductivity and capacity has been observed at f < 10000 Hz in response to the moisture change from 0 to 50%. Model of Schottky contact on thin PS layer with the charge carriers inside of pores and PS/Si interface is applied to explain the frequency dependence of conductivity/capacity as well as moisture effect.

引用

页码：111 / 114

页数：3

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