Silicon carbide schottky barrier diode

被引：0
|
作者：
Zhao, Jian H. [1 ]
Sheng, Kuang [1 ]
Lebron-Velilla, Ramon C. [2 ]
机构：
[1] SiCLAB, Rutgers University, 94 Brett Road, Piscataway, NJ 08854, United States
[2] NASA Glenn Research Center, 21000 Brookpark Road, Cleaveland, OH 44135, United States
来源：
International Journal of High Speed Electronics and Systems | 2005年 / 15卷 / 04期
关键词：
D O I：
10.1142/S0129156405003430
中图分类号：
学科分类号：
摘要：
195
引用
收藏
页码：821 / 866
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