Silicon carbide schottky barrier diode

被引：0
|
作者：
Zhao, Jian H. [1 ]
Sheng, Kuang [1 ]
Lebron-Velilla, Ramon C. [2 ]
机构：
[1] SiCLAB, Rutgers University, 94 Brett Road, Piscataway, NJ 08854, United States
[2] NASA Glenn Research Center, 21000 Brookpark Road, Cleaveland, OH 44135, United States
来源：
International Journal of High Speed Electronics and Systems | 2005年 / 15卷 / 04期
关键词：
D O I：
10.1142/S0129156405003430
中图分类号：
学科分类号：
摘要：
195
引用
收藏
页码：821 / 866
相关论文
共 50 条
  • [31] Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode
    Navarro, Dondee
    Herrera, Fernando
    Zenitani, Hiroshi
    Miura-Mattausch, Mitiko
    Yorino, Naoto
    Mattausch, Hans Jurgen
    Takusagawa, Mamoru
    Kobayashi, Jun
    Hara, Masafumi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [32] The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype
    Davydov, SY
    Lebedev, AA
    Posrednik, OV
    Tairov, YM
    SEMICONDUCTORS, 2001, 35 (12) : 1375 - 1377
  • [33] Very low Schottky barrier height at carbon nanotube and silicon carbide interface
    Inaba, Masafumi
    Suzuki, Kazuma
    Shibuya, Megumi
    Lee, Chih-Yu
    Masuda, Yoshiho
    Tomatsu, Naoya
    Norimatsu, Wataru
    Hiraiwa, Atsushi
    Kusunoki, Michiko
    Kawarada, Hiroshi
    APPLIED PHYSICS LETTERS, 2015, 106 (12)
  • [34] Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes
    Nicholls, Jordan
    Dimitrijev, Sima
    Tanner, Philip
    Han, Jisheng
    SCIENTIFIC REPORTS, 2019, 9 (1)
  • [35] Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide
    Shivaraman, Shriram
    Herman, Lihong H.
    Rana, Farhan
    Park, Jiwoong
    Spencer, Michael G.
    APPLIED PHYSICS LETTERS, 2012, 100 (18)
  • [36] Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes
    Jordan Nicholls
    Sima Dimitrijev
    Philip Tanner
    Jisheng Han
    Scientific Reports, 9
  • [37] 4H-silicon carbide Schottky barrier diodes for microwave applications
    Eriksson, J
    Rorsman, N
    Zirath, H
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (03) : 796 - 804
  • [38] The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype
    S. Yu. Davydov
    A. A. Lebedev
    O. V. Posrednik
    Yu. M. Tairov
    Semiconductors, 2001, 35 : 1375 - 1377
  • [39] Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction
    Rajput, S.
    Chen, M. X.
    Liu, Y.
    Li, Y. Y.
    Weinert, M.
    Li, L.
    NATURE COMMUNICATIONS, 2013, 4
  • [40] The Impact of Parasitic Inductance on the Performance of Silicon-Carbide Schottky Barrier Diodes
    Alatise, Olayiwola
    Parker-Allotey, Nii-Adotei
    Hamilton, Dean
    Mawby, Phil
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2012, 27 (08) : 3826 - 3833
12345