A model for the InGaAs/InP single photon avalanche diodes with multiple-quantum wells in the charge multiplication region

被引：0
|
作者：
H. S. Seo
S. H. Park
S. Kwak
D. Ahn
机构：
[1] University of Seoul,Department of Electrical and Computer Engineering and Center for Quantum Information Processing
[2] Catholic University of Daegu,Department of Electronics Engineering
[3] SK Telecom,Quantum Laboratory
[4] Florida Atlantic University,Physics Department, Charles E. Schmidt College of Science
来源：
Journal of the Korean Physical Society | 2018年 / 72卷
关键词：
Single photon detector; Quantum efficiency; Quantum well;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this work, we study the InP-InGaAs single photon avalanche diodes with multiple InGaAs quantum wells in the multiplication region for quantum information and communication. The compositions of InGaAs quantum wells are adjusted to give transition wavelength of 1.55. Simulation results show that three orders of magnitude improvement of dark count probability and an order of magnitude improvement of single photon quantum efficiency are expected with the adaption of multiple quantum-wells in the multiplication region. The improvement dark count probability is due to the difference of ionization coefficients for electrons and holes caused by the large difference between the conduction and valence band edge of multiple quantum-well layers inserted in the multiplication layer.
引用
收藏
页码：289 / 293
页数：4
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