Performance characterization of an InGaAs/InP single photon avalanche diode

被引:0
|
作者
Morath, CP [1 ]
Vaccaro, K [1 ]
Clark, WR [1 ]
Teynor, WA [1 ]
Roland, MA [1 ]
Bailey, W [1 ]
机构
[1] AFRL, SNHC, Hanscom AFB, MA USA
来源
关键词
single photon avalanche diodes; photon counting; avalanche photodiode; Geiger-mode; SPAD;
D O I
10.1117/12.562174
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
III-V based single photon avalanche diodes (SPADs), avalanche photodiodes (APDs) operated in Geiger-mode, are ideally suited for ultra-weak signal detection in the near infrared for photon counting and photon timing applications. Spaceborne SPADs would provide a rugged, compact alternative to photomultiplier tubes with lower operating voltage requirements, stronger near-IR response, and the possibility for array implementation. Results from a performance characterization of an in-house fabricated In0.53Ga0.47As/InP SPAD are presented. Sensitivity (NEP) and timing resolution (deltat) were investigated as a function of bias from T = 135 K to 165 K; an NEP approximate to 5 x 10(15) W/Hz(1/2) at T = 150 K and deltat approximate to 230 ps at T = 165 K were measured for lambda = 1.55 mum light.
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页码:100 / 111
页数:12
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