Design and performance of an InGaAs-InP single-photon avalanche diode detector

被引：125
|
作者：
Pellegrini, S [1 ]
Warburton, RE
Tan, LJJ
Ng, JS
Krysa, AB
Groom, K
David, JPR
Cova, S
Robertson, MJ
Buller, GS
机构：
[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[3] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 3-4期
基金：
英国工程与自然科学研究理事会;
关键词：
avalanche breakdown; avalanche photodiodes (APDs); photodetectors; photodiodes;
D O I：
10.1109/JQE.2006.871067
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 urn. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
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页码：397 / 403
页数：7
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