Performance characterization of an InGaAs/InP single photon avalanche diode

III-V based single photon avalanche diodes (SPADs), avalanche photodiodes (APDs) operated in Geiger-mode, are ideally suited for ultra-weak signal detection in the near infrared for photon counting and photon timing applications. Spaceborne SPADs would provide a rugged, compact alternative to photomultiplier tubes with lower operating voltage requirements, stronger near-IR response, and the possibility for array implementation. Results from a performance characterization of an in-house fabricated In0.53Ga0.47As/InP SPAD are presented. Sensitivity (NEP) and timing resolution (deltat) were investigated as a function of bias from T = 135 K to 165 K; an NEP approximate to 5 x 10(15) W/Hz(1/2) at T = 150 K and deltat approximate to 230 ps at T = 165 K were measured for lambda = 1.55 mum light.