Ultra-low dark count InGaAs/InP single photon avalanche diode

被引：4
|
作者：
Li Bin [1 ]
Niu Yuxiu [1 ]
Feng Yinde [1 ]
Chen Xiaomei [1 ]
机构：
[1] Accelink Technol Co Ltd, Wuhan 430000, Peoples R China
来源：
OPTOELECTRONICS LETTERS | 2022年 / 18卷 / 11期
关键词：
A; DETECTOR;
D O I：
10.1007/s11801-022-2036-3
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A low noise InGaAs/InP single photon avalanche diode (SPAD) is demonstrated. The device is based on planar type separate absorption, grading, charge and multiplication structure. Relying on reasonably designed device structure and low-damage Zn diffusion technology, excellent low-noise performance is achieved. Due to its importance, the physical mechanism of dark count is analyzed through performance characterization at different temperatures. The device can achieve 20% single photon detection efficiency and 320 Hz dark count rate (DCR) with a low after pulsing probability of 0.57% at 233 K.
引用
下载
收藏
页码：647 / 650
页数：4
相关论文
共 50 条
  • [1] Ultra-low dark count InGaAs/InP single photon avalanche diode
    Bin Li
    Yuxiu Niu
    Yinde Feng
    Xiaomei Chen
    [J]. Optoelectronics Letters, 2022, 18 : 647 - 650
  • [2] Ultra-low dark count InGaAs/InP single photon avalanche diode
    LI Bin
    NIU Yuxiu
    FENG Yinde
    CHEN Xiaomei
    [J]. Optoelectronics Letters, 2022, 18 (11) : 647 - 650
  • [3] Low dark count rate and low timing jitter InGaAs/InP Single-Photon Avalanche Diode
    Tosi, Alberto
    Sanzaro, Mirko
    Calandri, Niccolo
    Ruggeri, Alessandro
    Acerbi, Fabio
    [J]. PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014), 2014, : 82 - 85
  • [4] Modeling of Photocurrent and Dark Count Probability of InGaAs/InP Single Photon Avalanche Photodiode
    Mofasser, Ahammed
    Saha, Samprity
    Hadi, Khan Shaikhul
    Mohammedy, Farseem M.
    El-Batawy, Yasser
    [J]. 2017 2ND IEEE INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS AND PHOTONICS (ICTP), 2017, : 147 - 151
  • [5] InGaAs/InP single photon avalanche diode design and characterization
    Tosi, Alberto
    Cova, Sergio
    Zappa, Franco
    Itzler, Mark A.
    Ben-Michael, Rafael
    [J]. ESSDERC 2006: PROCEEDINGS OF THE 36TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2006, : 335 - +
  • [6] Performance characterization of an InGaAs/InP single photon avalanche diode
    Morath, CP
    Vaccaro, K
    Clark, WR
    Teynor, WA
    Roland, MA
    Bailey, W
    [J]. INFRARED SPACEBORNE REMOTE SENSING XII, 2004, 5543 : 100 - 111
  • [7] Design Criteria for InGaAs/InP Single-Photon Avalanche Diode
    Acerbi, Fabio
    Anti, Michele
    Tosi, Alberto
    Zappa, Franco
    [J]. IEEE PHOTONICS JOURNAL, 2013, 5 (02):
  • [8] Low afterpulsing and narrow timing response InGaAs/InP Single-Photon Avalanche Diode
    Tosi, Alberto
    Acerbi, Fabio
    Anti, Michele
    Zappa, Franco
    [J]. QUANTUM SENSING AND NANOPHOTONIC DEVICES X, 2013, 8631
  • [9] InGaAs/InP Single-Photon Avalanche Diode with narrow photon timing response
    Acerbi, Fabio
    Tosi, Alberto
    Shehata, Andrea Bahgat
    Anti, Michele
    Zappa, Franco
    [J]. 2012 IEEE PHOTONICS CONFERENCE (IPC), 2012, : 94 - 95
  • [10] Characteristics of Charge Persistence in InGaAs/InP Single-Photon Avalanche Diode
    Lee, Yi-Shan
    Chen, Kuan-Yu
    Chien, Sheng-Yu
    Chang, Shih-Cheng
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2018, 30 (22) : 1980 - 1982
12345