Photoelectrochemical Capacitance-Voltage Measurements in GaN

被引：0
|
作者：
C. E. Stutz
M. Mack
M. D. Bremser
O. H. Nam
R. F. Davis
D. C. Look
机构：
[1] WL/AAD,University Research Center
[2] WL/AAD Palace Knight co-located at University of California,undefined
[3] North Carolina State University,undefined
[4] Wright State University,undefined
来源：
Journal of Electronic Materials | 1998年 / 27卷
关键词：
Carrier concentration depth profile; GaN; photoelectrochemical etching;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Photoelectrochemical etching of GaN, using a KOH solution and a 325 nm wavelength UV laser, has been used to obtain carrier concentration depth profiles. The photoelectrochemical capacitance-voltage measurements are supported with conventional depletion mode capacitance-voltage, secondary ion mass spectroscopy, and Hall measurements. The data show that steps in carrier concentration profiles can be accurately reproduced.
引用
收藏
页码：L26 / L28
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