Growth dynamics of Ge1−xSix single crystals obtained by directional constitutional supercooling of the melt

被引：0
|
作者：
G. Kh. Azhdarov
Z. M. Zeynalov
Z. A. Agamaliyev
S. O. Mamedova
机构：
[1] Azerbaijan National Academy of Sciences,Institute of Physics
[2] Ganja State University,undefined
来源：
Crystallography Reports | 2011年 / 56卷
关键词：
Germanium; Crystallography Report; Growth Dynamic; Crystal Growth Rate; Silicon Concentration;
D O I：
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学科分类号：
摘要：
The problem of growth dynamics for crystals of binary solid solutions, obtained by the constitutional supercooling of the melt with a silicon feeding rod, has been solved within the Pfann approximation. The dependences of the change in the axial growth rate of Ge1−xSix crystals (0 ≤ x ≤ 0.3) are calculated. It is shown that the Ge1−xSix crystallization rate significantly changes during growth. The results make it possible to determine the optimal conditions and technological parameters for growing Ge1−xSix single crystals (0 ≤ x ≤ 0.3) with a specified concentration gradient along the crystallization axis.
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页码：531 / 534
页数：3
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