共 11 条
- [1] HOT CARRIER THERMO-emf CREATED BY A STRONG MICROWAVE ELECTRIC FIELD IN Ge1 - xSix SINGLE CRYSTALS IRRADIATED WITH FAST ELECTRONS. Soviet physics. Semiconductors, 1982, 16 (10): : 1173 - 1174
- [2] HOT-CARRIER THERMO-EMF OF HEAT-TREATED GERMANIUM-SILICON ALLOY SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 812 - 813
- [3] INFLUENCE OF ELECTRON-IRRADIATION ON HEATING OF CARRIERS BY AN ELECTRIC-FIELD APPLIED TO GE1-XSIX SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (10): : 1155 - 1157
- [4] HOT-CARRIER THERMO-EMF OF HEAT-TREATED GERMANIUM-SILICON ALLOY SINGLE CRYSTALS. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (07): : 812 - 813
- [5] HEATING OF CARRIERS BY A STRONG MICROWAVE ELECTRIC-FIELD IN HEAT-TREATED GE-SI SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (01): : 36 - 38
- [6] INVESTIGATION OF HOT CARRIERS GENERATED BY A STRONG MICROWAVE ELECTRIC-FIELD IN N-TYPE INSE SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 1029 - 1031
- [7] HOT-ELECTRONS IN N=CDXHG1-XTE SINGLE-CRYSTALS AT STRONG ELECTRIC-FIELDS IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1983, 4 (04): : 88 - 92
- [8] THE INFLUENCE OF STRONG ELECTRIC-FIELD ON THE RESIDUAL CONDUCTION OF GASEX TE1-X (SN) SINGLE-CRYSTALS IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1980, (04): : 62 - 65
- [9] EFFECT OF HIGH AC ELECTRIC-FIELD ON THE F-BAND ABSORPTION AND THERMO-LUMINESCENCE OF X-RAY-IRRADIATED NACL AND KCL SINGLE-CRYSTALS PHYSICA SCRIPTA, 1985, 31 (03): : 219 - 221
- [10] DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF P-TYPE CDXHG1-XTE SOLID-SOLUTION SINGLE-CRYSTALS ON THE INTENSITY OF A STRONG MICROWAVE ELECTRIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 513 - 516