Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures

被引：3
|
作者：
Egorkin V.I. [1 ]
Zemlyakov V.E. [1 ]
Nezhentsev A.V. [1 ]
Garmash V.I. [1 ]
机构：
[1] National Research University of Electronic Technology (MIET), Zelenograd
来源：
Russian Microelectronics | 2017年 / 46卷 / 4期
关键词：
D O I：
10.1134/S1063739717040035
中图分类号：
学科分类号：
摘要：
This paper investigates ohmic contacts to n-GaAs layers of the heterobipolar nanoheterostructures obtained through electron-beam evaporation of Ge, Au, Ni, and Au layer-by-layer. The effect of the firing time and temperature on the contact resistance is considered. Based on the analysis of the characteristics of the ohmic contacts, a firing installation of a special design and a firing technique are developed. The technique ensures the minimum contact resistance for the minimum size of a transition layer, satisfactory morphology, and even edges of the contacts. © 2017, Pleiades Publishing, Ltd.
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页码：272 / 276
页数：4
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