Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures

被引：3

作者：

Egorkin V.I. ^{[1
]}

Zemlyakov V.E. ^{[1
]}

Nezhentsev A.V. ^{[1
]}

Garmash V.I. ^{[1
]}

机构：

[1] National Research University of Electronic Technology (MIET), Zelenograd

来源：

Russian Microelectronics | 2017年 / 46卷 / 4期

关键词：

D O I：

10.1134/S1063739717040035

中图分类号：

学科分类号：

摘要：

This paper investigates ohmic contacts to n-GaAs layers of the heterobipolar nanoheterostructures obtained through electron-beam evaporation of Ge, Au, Ni, and Au layer-by-layer. The effect of the firing time and temperature on the contact resistance is considered. Based on the analysis of the characteristics of the ohmic contacts, a firing installation of a special design and a firing technique are developed. The technique ensures the minimum contact resistance for the minimum size of a transition layer, satisfactory morphology, and even edges of the contacts. © 2017, Pleiades Publishing, Ltd.

引用

页码：272 / 276

页数：4

共 50 条

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[2] Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures
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[3] Ohmic contacts to n-GaAs nanowires
Gutsche, C.
Lysov, A.
Regolin, I.
Brodt, A.
Liborius, L.
Frohleiks, J.
Prost, W.
Tegude, F. -J.
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
[4] Regrowth of a GaAs layer for n-GaAs ohmic contacts
[J]. 1600, (71):
[5] SELECTIVE FORMATION OF OHMIC CONTACTS TO N-GAAS
YAMANE, Y
TAKAHASHI, Y
ISHII, H
HIRAYAMA, M
[J]. ELECTRONICS LETTERS, 1987, 23 (08) : 382 - 383
[6] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS
STALL, R
WOOD, CEC
BOARD, K
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1979, 15 (24) : 800 - 801
[7] Properties of Pd/Sn Ohmic contacts on n-GaAs
Islam, MS
McNally, PJ
Cameron, DC
Herbert, PAF
[J]. JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 1998, 77 (1-3) : 42 - 49
[8] STABLE AND SHALLOW PDLN OHMIC CONTACTS TO N-GAAS
WANG, LC
WANG, XZ
LAU, SS
SANDS, T
CHAN, WK
KUECH, TF
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DAVEY, JE
DIETRICH, HB
ANDERSON, WT
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ALLEN, LH
HUNG, LS
KAVANAGH, KL
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YU, AJ
MAYER, JW
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