REFRACTORY-PASSIVATED ION-IMPLANTED OHMIC CONTACTS TO N-GAAS LAYERS

被引：0
|
作者：
CHRISTOU, A [1 ]
DAVEY, JE [1 ]
DIETRICH, HB [1 ]
ANDERSON, WT [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 11期
关键词：
D O I：
10.1109/T-ED.1979.19775
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1854 / 1854
页数：1
相关论文
共 50 条
  • [1] OHMIC CONTACTS ON ION-IMPLANTED N-TYPE GAAS-LAYERS
    INADA, T
    KATO, S
    HARA, T
    TOYODA, N
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4466 - 4468
  • [2] REFRACTORY METALLIZED ION-IMPLANTED EPITAXIAL GE-GAAS OHMIC CONTACTS
    ANDERSON, WT
    CHRISTOU, A
    DIETRICH, HB
    GIULIANI, JF
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C392 - C392
  • [3] OHMIC AND SCHOTTKY CONTACTS ON PHOTOCHEMICALLY PASSIVATED N-GAAS SURFACES
    PRASAD, K
    FARAONE, L
    NASSIBIAN, AG
    [J]. THIN SOLID FILMS, 1991, 195 (1-2) : L11 - L16
  • [4] FORMATION OF OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF EVAPORATED AND ION-IMPLANTED GE FILMS
    FUKADA, T
    ASANO, T
    FRUKAWA, S
    ISHIWARA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (01): : 117 - 121
  • [5] Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures
    Egorkin V.I.
    Zemlyakov V.E.
    Nezhentsev A.V.
    Garmash V.I.
    [J]. Russian Microelectronics, 2017, 46 (4) : 272 - 276
  • [6] Ohmic contacts to n-GaAs nanowires
    Gutsche, C.
    Lysov, A.
    Regolin, I.
    Brodt, A.
    Liborius, L.
    Frohleiks, J.
    Prost, W.
    Tegude, F. -J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
  • [7] SELECTIVE FORMATION OF OHMIC CONTACTS TO N-GAAS
    YAMANE, Y
    TAKAHASHI, Y
    ISHII, H
    HIRAYAMA, M
    [J]. ELECTRONICS LETTERS, 1987, 23 (08) : 382 - 383
  • [8] RAMAN-SCATTERING FROM ION-IMPLANTED CARRIERS IN N-GAAS
    NICHOLAS, RJ
    STOLZ, HJ
    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (01) : 55 - 58
  • [9] Photoacoustic and photoluminescence studies of H+ ion-implanted n-GaAs
    Srinivasan, R
    Sanjeeviraja, C
    Ramachandran, K
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (03): : 419 - 424
  • [10] AN OPTIMAL ANNEALING TECHNIQUE FOR OHMIC CONTACTS TO ION-IMPLANTED N-LAYERS IN SEMIINSULATING INDIUM-PHOSPHIDE
    PANDE, KP
    MARTIN, E
    GUTIERREZ, D
    AINA, O
    [J]. SOLID-STATE ELECTRONICS, 1987, 30 (03) : 253 - 258
12345