Solvent-assisted reduction in the lateral leakage current in solution-processed organic transistors

被引：0
|
作者：
Won-Yong Lee
Joonku Hahn
Jin-Hyuk Bae
机构：
[1] Kyungpook National University,School of Electronics Engineering
来源：
Journal of the Korean Physical Society | 2016年 / 69卷
关键词：
Solution-processed organic transistors; Lateral leakage current; Solvent vapor treatment; Bulk charge trapping;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report an effective method for bringing about a significant reduction in the lateral leakage current passing through the non-channel region of an organic semiconductor through an organic solvent vapor treatment. The hydroxyl-containing dimethyl-sulfoxide molecules interrupt the bulk charge transport after undergoing solvent vapor treatment and reduce the lateral leakage current effectively, but the channel current in the solution-processed organic thin-film transistors is not degraded. The lateral leakage current was found to be 20 times lower compared with the case of the non-treated device. A highly improved on/off current ratio was achieved by reducing the lateral leakage current through a solvent vapor treatment.
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页码：226 / 230
页数：4
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