Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs

Phase diagrams of GaAs (001) surface structures were used to calibrate sensors of the substrate temperature and As flux in molecular-beam epitaxy systems. The sublimation temperature of amorphous layers of As adsorbed on GaAs was measured. It was shown that this temperature is constant and does not depend on the rate of substrate heating, layer thickness, or the degree of vacuum in the system. The sublimation temperature of amorphous As can be used as a reference point to calibrate the substrate temperature in the range of low growth temperatures.