Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs

被引：0
|
作者：
V. V. Preobrazhenskii
M. A. Putyato
B. R. Semyagin
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
来源：
Semiconductors | 2002年 / 36卷
关键词：
Phase Diagram; GaAs; Layer Thickness; Reference Point; Magnetic Material;
D O I：
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学科分类号：
摘要：
Phase diagrams of GaAs (001) surface structures were used to calibrate sensors of the substrate temperature and As flux in molecular-beam epitaxy systems. The sublimation temperature of amorphous layers of As adsorbed on GaAs was measured. It was shown that this temperature is constant and does not depend on the rate of substrate heating, layer thickness, or the degree of vacuum in the system. The sublimation temperature of amorphous As can be used as a reference point to calibrate the substrate temperature in the range of low growth temperatures.
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页码：837 / 840
页数：3
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