The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals

indent 0 pt Local irradiation of p-Si and n-Si followed by measurement of the bulk photovoltage along the sample is used to show that the Coulomb interaction energy between unlike charged components of Frenkel pairs is negligible compared to energies imparted to a silicon atom when n-Si is irradiated with electrons having energies of 6–8 MeV. It is asserted that when n-Si is irradiated by 8-MeV electrons, the cascade mechanism for defect formation prevails over the diffusion mechanism.