The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals

被引：0
|
作者：
Z. V. Basheleishvili
T. A. Pagava
机构：
[1] Georgian Technical University,
来源：
Semiconductors | 1999年 / 33卷
关键词：
Silicon; Interaction Energy; Magnetic Material; Electromagnetism; Coulomb Interaction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
indent 0 pt Local irradiation of p-Si and n-Si followed by measurement of the bulk photovoltage along the sample is used to show that the Coulomb interaction energy between unlike charged components of Frenkel pairs is negligible compared to energies imparted to a silicon atom when n-Si is irradiated with electrons having energies of 6–8 MeV. It is asserted that when n-Si is irradiated by 8-MeV electrons, the cascade mechanism for defect formation prevails over the diffusion mechanism.
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页码：845 / 846
页数：1
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