The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals

被引：0
|
作者：
Z. V. Basheleishvili
T. A. Pagava
机构：
[1] Georgian Technical University,
来源：
Semiconductors | 1999年 / 33卷
关键词：
Silicon; Interaction Energy; Magnetic Material; Electromagnetism; Coulomb Interaction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
indent 0 pt Local irradiation of p-Si and n-Si followed by measurement of the bulk photovoltage along the sample is used to show that the Coulomb interaction energy between unlike charged components of Frenkel pairs is negligible compared to energies imparted to a silicon atom when n-Si is irradiated with electrons having energies of 6–8 MeV. It is asserted that when n-Si is irradiated by 8-MeV electrons, the cascade mechanism for defect formation prevails over the diffusion mechanism.
引用
收藏
页码：845 / 846
页数：1
相关论文
共 50 条
  • [1] The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals
    Basheleishvili, ZV
    Pagava, TA
    SEMICONDUCTORS, 1999, 33 (08) : 845 - 846
  • [2] DEPENDENCE OF THE EFFICIENCY OF HOMOGENEOUS FRENKEL PAIR ANNIHILATION IN CRYSTALS ON IRRADIATION INTENSITY
    MIKHNOVICH, VV
    EMTSEV, VV
    MASHOVETS, TV
    VITOVSKII, NA
    FIZIKA TVERDOGO TELA, 1989, 31 (03): : 306 - 308
  • [3] EFFECT OF FRENKEL PRIMARY PAIR SEPARATION BY AN ELECTRIC-FIELD IN SILICON
    MILEVSKII, LS
    GARNYK, VS
    DOKLADY AKADEMII NAUK SSSR, 1979, 246 (02): : 307 - 310
  • [4] An influence of surface upon the efficiency of the irradiation Frenkel'-pair-type point-defects' formation
    Nosenko, VY
    Pivovarov, AL
    Cherepin, VT
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 1996, 18 (07): : 33 - 35
  • [5] FRENKEL PAIR FORMATION ENERGY IN ALUMINUM
    AUGST, GR
    FIZIKA METALLOV I METALLOVEDENIE, 1986, 62 (01): : 43 - 47
  • [6] ENERGY OF FORMATION OF ANION FRENKEL PAIR IN CALCIUM FLUORIDE
    FRANKLIN, AD
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) : 933 - &
  • [7] INFLUENCE OF AN EXTERNAL ELECTRIC FIELD ON THE SILICON HOMOEPITAXY PROCESS.
    Cistjakov, Yu.D.
    Raynova, Yu.P.
    Schneider, H.G.
    Electron Technology (Warsaw), 1980, 13 (1-2): : 117 - 131
  • [8] Control of Subgrain Formation in Protein Crystals by the Application of an External Electric Field
    Koizumi, H.
    Uda, S.
    Fujiwara, K.
    Tachibana, M.
    Kojima, K.
    Nozawa, J.
    CRYSTAL GROWTH & DESIGN, 2014, 14 (11) : 5662 - 5667
  • [9] Theoretical study on Frenkel pair formation and recombination in single crystal silicon
    Sueoka, Koji
    Fukuda, Hiroaki
    JOURNAL OF CRYSTAL GROWTH, 2019, 520 : 1 - 10
  • [10] Displacement threshold and Frenkel pair formation energy in ionic systems
    Kittiratanawasin, L.
    Smith, Roger
    Uberuaga, B. P.
    Sickafus, Kurt
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (19): : 2901 - 2906
12345