Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films

被引：0
|
作者：
X.J. Meng
J.H. Ma
J.L. Sun
T. Lin
J. Yu
G.S. Wang
J.H. Chu
机构：
[1] Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics
来源：
Applied Physics A | 2004年 / 78卷
关键词：
Thin Film; Vanadium; Electrical Property; Dielectric Property; Solution Method;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The ferroelectric and dielectric properties of Bi4-xLaxTi3O12 (BLT) and Bi4-xLaxTi2.97V0.03O12 (BLTV) thin films deposited on (111)Pt/Ti/SiO2/Si substrates using a chemical solution method were investigated. The BLTV thin films showed a larger remanent polarization (9.6 μC/cm2) than the BLT thin films (6.5 μC/cm2), while the coercive field for both thin films was nearly the same. The capacitance of the films as a function of a small ac driving field was measured, and the data were processed using Rayleigh’s law. The results show that the Rayleigh constant of the BLT films was smaller than that of the BLTV films, indicating that the defect concentration was lower in the latter case. The superior ferroelectricity of the BLTV films was attributed to a decrease of both the (001) orientation and the defect concentration.
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页码：1089 / 1091
页数：2
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