Anisotropy of phonon-plasmon modes in GaAs/AlAs(311) superlattices

被引：0
|
作者：
V. A. Volodin
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
来源：
Physics of the Solid State | 2011年 / 53卷
关键词：
GaAs; Raman Spectrum; SERS; Plasmon Mode; Structural Anisotropy;
D O I：
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摘要：
Doped GaAs/AlAs superlattices grown on the (311)A and (311)B surfaces have been studied using Raman spectroscopy. Phonon and phonon-plasmon modes with different directions of the wave vectors in the superlattice plane (i.e., the modes propagating in different lateral directions) have been observed in back-scattering from the superlattice face with the use of a Raman scattering accessory. Lateral anisotropy of mixed phonon-plasmon modes associated with structural anisotropy of the superlattice grown on the faceted (311)A surface has been experimentally revealed for the first time.
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页码：404 / 406
页数：2
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