Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices

被引：0
|
作者：
V. A. Volodin
M. D. Efremov
V. V. Preobrazhenskii
B. R. Semyagin
V. V. Bolotov
V. A. Sachkov
E. A. Galaktionov
A. V. Kretinin
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
[2] Russian Academy of Sciences,Institute of Sensor Microelectronics, Siberian Division
[3] Novosibirsk State University,undefined
来源：
Journal of Experimental and Theoretical Physics Letters | 2000年 / 71卷
关键词：
63.20.Ls; 73.20.Dx.478;
D O I：
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摘要：
The phonon-plasmon interaction in tunneling GaAsn/AlAsm superlattices (m=5and 6≥n≥0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers.
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页码：477 / 480
页数：3
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