Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices

被引：7
|
作者：
Volodin, VA
Efremov, MD
Preobrazhenskii, VV
Semyagin, BR
Bolotov, VV
Sachkov, VA
Galaktionov, EA
Kretinin, AV
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
[2] Russian Acad Sci, Inst Sensor Microelect, Siberian Div, Omsk 644077, Russia
[3] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
JETP LETTERS | 2000年 / 71卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1307997
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The phonon-plasmon interaction in tunneling GaAsn/AlAsm superlattices (m = 5 and 6 greater than or equal to n greater than or equal to 0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers. (C) 2000 MAIK "Nauka / Interperiodica".
引用
收藏
页码：477 / 480
页数：4
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