1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD

被引：0
|
作者：
Hong Ma
Xinjian Yi
Sihai Chen
机构：
[1] Huazhong University of Science and Technology,Department of Opto
来源：
Optical and Quantum Electronics | 2003年 / 35卷
关键词：
AlGaInAs/InP; MOCVD; optical amplifier; polarization-insensitive;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Polarization-insensitive AlGaInAs'InP semiconductor optical amplifier is realized at wavelength of 1.55 μ. The active layer consists of three tensile strained wells with strain of 0.40%. The amplifier is fabricated to ridge waveguide structure. The testing result shows the amplifiers have excellent polarization insensitivity (less than 0.8dB). The 1540 nm wavelength optical gain is 20 dB at the bias current of 200 mA.
引用
收藏
页码：1107 / 1112
页数：5
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