TEMPERATURE BEHAVIOR OF A BULK INGAASP/INP RIDGE-WAVE-GUIDE STRUCTURE FOR POLARIZATION-INSENSITIVE OPTICAL AMPLIFIER OPERATION

被引：3
|
作者：
PAJAROLA, S
ECKNER, J
BESSE, PA
GUEKOS, G
SYVRIDIS, D
机构：
[1] Institute for Quantum Elektronics, Swiss Federal Institute of Technology
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 22期
关键词：
D O I：
10.1063/1.113031
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The polarization dependent temperature behavior of an InGaAsP/InP ridge waveguide structure designed for polarization insensitive semiconductor optical amplifier operation is investigated by means of measuring the threshold current of the diode in an external cavity configuration. In the wavelength range 1.48 μm<λ<1.57 μm and the temperature range 288 K<T<323 K, TE and TM show practically the same wavelength dependent threshold variation with temperature. © 1994 American Institute of Physics.
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收藏
页码：2762 / 2764
页数：3
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