Structural characterization of through silicon vias

被引：0
|
作者：
H. Bender
C. Drijbooms
P. Van Marcke
J. Geypen
H. G. G. Philipsen
A. Radisic
机构：
[1] IMEC,
来源：
Journal of Materials Science | 2012年 / 47卷
关键词：
Milling; High Aspect Ratio; Milled Face; Small Void; XeF2;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Different milling strategies for the structural characterization of through silicon vias on silicon wafers and in stacked dies are examined. For investigation of the filling quality, the most appropriate analysis technique is dual beam focused ion beam and scanning electron microscopy. The characterization of thin barriers and Cu seed layers requires transmission electron microscopy. An optimized TEM specimen preparation method is discussed.
引用
收藏
页码：6497 / 6504
页数：7
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