Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes

被引:0
|
作者
A. I. Galimov
M. V. Rakhlin
G. V. Klimko
Yu. M. Zadiranov
Yu. A. Guseva
S. I. Troshkov
T. V. Shubina
A. A. Toropov
机构
[1] Ioffe Institute,
[2] Russian Academy of Sciences,undefined
来源
JETP Letters | 2021年 / 113卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The characteristics of single photons emitted by columnar microstructures based on epitaxial microcavity heterostructures with distributed Bragg reflectors, which include self-organized InAs/GaAs quantum dots and have a comparatively low Q factor in the range of 2000–3000, have been studied. It has been shown that a state with a given spin configuration—exciton with a certain polarization or trion—can be initialized in a single quantum dot under the coherent resonant linearly polarized optical pumping by a π pulse. The measurement of two-photon interference by the Hong–Ou–Mandel scheme has demonstrated that the degree of indistinguishability of successively emitted single photons is 97 and 93% at a time delay of 2 and 250 ns, respectively. Prospects of application of such sources in optical quantum computing schemes have been discussed.
引用
收藏
页码:252 / 258
页数:6
相关论文
共 50 条
  • [31] Composition profiling of InAs/GaAs quantum dots
    Lemaître, A
    Patriarche, G
    Glas, F
    APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3717 - 3719
  • [32] Intersublevel emission in InAs/GaAs quantum dots
    Sauvage, S
    Boucaud, P
    Brunhes, T
    Lemaître, A
    Gérard, JM
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (02): : 579 - 583
  • [33] Random Population of InAs/GaAs Quantum Dots
    O'Driscoll, I.
    Hutchings, M.
    Smowton, P. M.
    Blood, P.
    2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 740 - 741
  • [34] Molecular beam epitaxial growth of self-assembled InAs/GaAs quantum dots
    Nakata, Y
    Sugiyama, Y
    Sugawara, M
    SELF-ASSEMBLED INGAAS/GAAS QUANTUM DOTS, 1999, 60 : 117 - 154
  • [35] STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer epitaxial techniques
    Guryanov, GM
    Cirlin, GE
    Petrov, VN
    Polyakov, NK
    Golubok, AO
    Tipissev, SY
    Gubanov, VB
    Samsonenko, YB
    Ledentsov, NN
    Shchukin, VA
    Grundmann, M
    Bimberg, D
    Alferov, ZI
    SURFACE SCIENCE, 1996, 352 : 651 - 655
  • [36] Relaxation pathways in InAs/GaAs quantum dots
    Persson, M
    Panev, N
    Landin, L
    Jeppesen, S
    Pistol, ME
    PHYSICAL REVIEW B, 2001, 64 (07)
  • [37] Formation and dissolution of InAs quantum dots on GaAs
    Heyn, C
    Endler, D
    Zhang, K
    Hansen, W
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) : 421 - 428
  • [38] On the morphology and composition of InAs/GaAs quantum dots
    Grillo, V
    Lazzarini, L
    Remmele, T
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 264 - 268
  • [39] Excited states of InAs/GaAs quantum dots
    Heitz, R
    Guffarth, F
    Mukhametzhanov, I
    Stier, O
    Madhukar, A
    Bimberg, D
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (02): : 367 - 371
  • [40] Atomic structure of InAs quantum dots on GaAs
    Jacobi, K
    PROGRESS IN SURFACE SCIENCE, 2003, 71 (5-8) : 185 - 215