Excited states of InAs/GaAs quantum dots

被引：0
|
作者：
Heitz, R
Guffarth, F
Mukhametzhanov, I
Stier, O
Madhukar, A
Bimberg, D
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ So Calif, Photon Mat & Devices Lab, Los Angeles, CA USA
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2001年 / 224卷 / 02期
关键词：
D O I：
10.1002/1521-3951(200103)224:2<367::AID-PSSB367>3.0.CO;2-B
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Exciton properties of self-organized InAs/GaAs QDs are investigated. Size-selective spectroscopy reveals the excited single-exciton transition spectrum and enhanced polar exciton-LO-phonon coupling. A good qualitative understanding of the experimental results is achieved by eight-band kp calculations. Renormalization of the single-exciton spectrum in highly populated QDs shows the importance of many-particle interactions in the strong confinement limit. The ground state transition energy decreases by similar to 16 meV for QDs occupied with similar to 18 excitons.
引用
收藏
页码：367 / 371
页数：5
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