Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

被引：0
|
作者：
Takeshi Kitatani
Masahiko Kondow
Koji Nakahara
M. C. Larson
Kazuhisa Uomi
机构：
[1] RWCP Optical Interconnection Hitachi Laboratory,Central Research Laboratory
[2] c/o Central Research Laboratory,undefined
[3] Hitachi,undefined
[4] Ltd.,undefined
[5] Lawrence Livermore National Laboratory,undefined
来源：
Optical Review | 1998年 / 5卷
关键词：
semiconductor junction lasers; quantum well;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.
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页码：69 / 71
页数：2
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