Insulator–metal transition in substrate-independent VO2 thin film for phase-change devices

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作者
Mohammad Taha
Sumeet Walia
Taimur Ahmed
Daniel Headland
Withawat Withayachumnankul
Sharath Sriram
Madhu Bhaskaran
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[1] Functional Materials and Microsystems Research Group and Micro Nano Research Facility,
[2] RMIT University,undefined
[3] Melbourne,undefined
[4] School of Electrical and Electronic Engineering,undefined
[5] The University of Adelaide,undefined
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摘要
Vanadium has 11 oxide phases, with the binary VO2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator–to–metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO2 synthesis have also been standing issues in VO2 fabrication. Here, we address these major challenges in harnessing the functionality in VO2 by demonstrating an approach that enables crystalline, switchable VO2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO2 on any substrate, thereby exploiting its untapped potential.
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