Vanadium has 11 oxide phases, with the binary VO2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator–to–metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO2 synthesis have also been standing issues in VO2 fabrication. Here, we address these major challenges in harnessing the functionality in VO2 by demonstrating an approach that enables crystalline, switchable VO2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO2 on any substrate, thereby exploiting its untapped potential.
机构:
School of Electronic Information and Engineering,Tianjin UniversitySchool of Electronic Information and Engineering,Tianjin University
梁继然
吴劢君
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School of Electronic Information and Engineering,Tianjin UniversitySchool of Electronic Information and Engineering,Tianjin University
吴劢君
胡明
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机构:
School of Electronic Information and Engineering,Tianjin UniversitySchool of Electronic Information and Engineering,Tianjin University
胡明
刘剑
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机构:
State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors,Chinese Academy of SciencesSchool of Electronic Information and Engineering,Tianjin University
刘剑
朱乃伟
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School of Electronic Information and Engineering,Tianjin UniversitySchool of Electronic Information and Engineering,Tianjin University
朱乃伟
夏晓旭
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School of Electronic Information and Engineering,Tianjin UniversitySchool of Electronic Information and Engineering,Tianjin University
机构:
Institute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, MoscowInstitute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, Moscow
Lelyuk D.P.
Mishin A.D.
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Institute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, MoscowInstitute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, Moscow
Mishin A.D.
Maklakov S.S.
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Institute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, MoscowInstitute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, Moscow
Maklakov S.S.
Makarevich A.M.
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机构:
Lomonosov Moscow State University, MoscowInstitute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, Moscow
Makarevich A.M.
Sharovarov D.I.
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机构:
Lomonosov Moscow State University, MoscowInstitute for Theoretical and Applied Electromagnetics, Russian Academy of Sciences, Moscow
机构:
Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Lee, D.
Chung, B.
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机构:
Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South KoreaUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Chung, B.
Shi, Y.
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机构:
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Shi, Y.
Kim, G. -Y.
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Korea Inst Mat Sci, Dept Mat Modeling & Characterizat, Chang Won 642831, South Korea
POSTECH, Dept Mat & Sci, Pohang 37673, South KoreaUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Kim, G. -Y.
Campbell, N.
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Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Campbell, N.
Xue, F.
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h-index: 0
机构:
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Xue, F.
Song, K.
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Korea Inst Mat Sci, Dept Mat Modeling & Characterizat, Chang Won 642831, South KoreaUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Song, K.
Choi, S. -Y.
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Korea Inst Mat Sci, Dept Mat Modeling & Characterizat, Chang Won 642831, South Korea
POSTECH, Dept Mat & Sci, Pohang 37673, South KoreaUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Choi, S. -Y.
Podkaminer, J. P.
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机构:
Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Podkaminer, J. P.
Kim, T. H.
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Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Kim, T. H.
Ryan, P. J.
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h-index: 0
机构:
Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
Dublin City Univ, Sch Phys Sci, Dublin 9, IrelandUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Ryan, P. J.
Kim, J. -W.
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h-index: 0
机构:
Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Kim, J. -W.
Paudel, T. R.
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机构:
Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Paudel, T. R.
Kang, J. -H.
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h-index: 0
机构:
Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Kang, J. -H.
Spinuzzi, J. W.
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机构:
Boise State Univ, Dept Phys, Boise, ID 83725 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Spinuzzi, J. W.
Tenne, D. A.
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机构:
Boise State Univ, Dept Phys, Boise, ID 83725 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Tenne, D. A.
Tsymbal, E. Y.
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机构:
Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Tsymbal, E. Y.
Rzchowski, M. S.
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机构:
Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Rzchowski, M. S.
Chen, L. Q.
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h-index: 0
机构:
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Chen, L. Q.
Lee, J.
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h-index: 0
机构:
Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South KoreaUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Lee, J.
Eom, C. B.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USAUniv Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
机构:
Univ Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, FranceUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
John, Jimmy
Slassi, Amine
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机构:
CNR NANO Ist Nanosci, I-41125 Modena, ItalyUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Slassi, Amine
Sun, Jianing
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JA Woollam Co, 645 M St,Suite 102, Lincoln, NE 68508 USAUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Sun, Jianing
Sun, Yifei
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h-index: 0
机构:
Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USAUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Sun, Yifei
Bachelet, Romain
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机构:
Univ Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, FranceUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Bachelet, Romain
Penuelas, Jose
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Univ Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, FranceUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Penuelas, Jose
Saint-Girons, Guillaume
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机构:
Univ Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, FranceUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Saint-Girons, Guillaume
Orobtchouk, Regis
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机构:
Univ Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, FranceUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Orobtchouk, Regis
Ramanathan, Shriram
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h-index: 0
机构:
Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USAUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Ramanathan, Shriram
Calzolari, Arrigo
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h-index: 0
机构:
CNR NANO Ist Nanosci, I-41125 Modena, ItalyUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France
Calzolari, Arrigo
Cueff, Sebastien
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h-index: 0
机构:
Univ Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, FranceUniv Lyon, Inst Nanotechnol Lyon INL, Ecole Cent Lyon, UMR 5270,CNRS, 36 Ave Guy Collongue, F-69134 Ecully, France