SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition

被引：0
|
作者：
P. M. Mooney
J. O. Chu
J. A. Ott
机构：
[1] IBM Research Division,T.J. Watson Research Center
来源：
Journal of Electronic Materials | 2000年 / 29卷
关键词：
SiGe heterostructures; SOS substrates; UHV/CVD;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SiGe heterostructures on silicon-on-sapphire (SOS) substrates were investigated to determine the advantages of combining these two technologies. Devicequality epitaxial layer structures were grown by ultra-high vacuum chemical vapor deposition (UHV/CVD) on silicon-on-sapphire substrates having a very low density of microtwin defects. Enhancements in device performance comparable to similar SiGe devices on bulk Si substrates were achieved, even though significant interdiffusion of Si and Ge had occurred during device fabrication processes at T>850°C. These results emphasize the need for low temperature fabrication processes to fully exploit SiGe heterostructures for device applications.
引用
收藏
页码：921 / 927
页数：6
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