SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition

被引：6
|
作者：
Mooney, PM [1 ]
Chu, JO [1 ]
Ott, JA [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Hts, NY 10598 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 07期
关键词：
SiGe heterostructures; SOS substrates; UHV/CVD;
D O I：
10.1007/s11664-000-0182-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiGe heterostructures on silicon-on-sapphire (SOS) substrates were investigated to determine the advantages of combining these two technologies. Device-quality epitaxial layer structures were grown by ultra-high vacuum chemical vapor deposition (UHV/CVD) on silicon-on-sapphire substrates having a very low density of microtwin defects. Enhancements in device performance comparable to similar SiGe devices on bulk Si substrates were achieved, even though significant interdiffusion of Si and Ge had occurred during device fabrication processes at T>850 degrees C. These results emphasize the need for low temperature fabrication processes to fully exploit SiGe heterostructures for device applications.
引用
收藏
页码：921 / 927
页数：7
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