High-Tc Ramp-Type Josephson Junctions for Rapid Single Flux Quantum Circuits

被引：0
|
作者：
M.Q. Huang
Z.G. Ivanov
P.V. Komissinski
P.B. Mozhaev
T. Claeson
机构：
[1] Chalmers University of Technology and University of Göteborg,Department of Microelectronics and Nanoscience
来源：
Journal of Low Temperature Physics | 1999年 / 117卷
关键词：
Magnetic Material; Localize State; Dominant Role; Critical Current Density; Josephson Junction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ramp-type Josephson junctions with YBCO superconducting electrodes and PrBa2Cu2.6Ga0.4O6+δ(PBGCO) barriers were fabricated and characterized. The YBCO ramp junctions with 25 nm-thick barriers of PBGCO showed typical resistively- shunted-junction (RSJ)-like I-V behavior and 1σ spread of less than 13% in critical current density. Differential conductance-voltage characteristics registered using a lock-in technique indicate that the resonant tunneling via localized states in the barriers plays a dominant role in the conduction process of the ramp junctions.
引用
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页码：587 / 591
页数：4
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