Interface-modified ramp-type Josephson junctions in trilayer structures

被引：0
|
作者：
Matsushita, M [1 ]
Okabe, Y [1 ]
机构：
[1] Univ Tokyo, RCAST, Tokyo 1538904, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2002年 / E85C卷 / 03期
关键词：
interface-modified; ramp-type; trilayer structures; Josephson junction;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated ramp-type Josephson junctions in trilayer structures. A bilayer of YBa2Cu3O7-chi, (YBCO)/CeO2 was deposited on a SrTiO3 (100) substrate. Then, circle patterns with a diameter of 2 mum were etched on the bilayer surface using standard photolithography process. During the Ar ion milling with an incident angle of 45 degrees to the bilayer surface, the sample was rotated. This process led to upside-down conical formations. After the ramp-edge surface was modified, another YBCO film was deposited for the top electrode. The junctions showed the I-V characteristics between resistively shunted junction and flux-flow types.
引用
收藏
页码：769 / 771
页数：3
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