Light emission from interface traps and bulk defects in SiC MOSFETs

被引：0
|
作者：
R. E. Stahlbush
P. J. Macfarlane
机构：
[1] Naval Research Laboratory,
来源：
Journal of Electronic Materials | 2001年 / 30卷
关键词：
SiC; MOSFETs; light emission;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Images and spectra of light emission have been observed in 4H and 6HSiC n-type MOSFETs originating from electron-hole recombination at interface traps and from the bulk under the channel. Low mobility and high interface trap density impedes the flow of electrons into the channel. Its time evolution was imaged. It is slower in 4H than in 6H MOSFETs due to the lower channel mobility and higher interface trap density in the former. Emission images reveal triangular shaped 3C inclusions and these defects were found to alter the formation of the inversion layer.
引用
收藏
页码：188 / 195
页数：7
相关论文
共 50 条
  • [1] Light emission from interface traps and bulk defects in SiC MOSFETs
    Stahlbush, RE
    Macfarlane, PJ
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (03) : 188 - 195
  • [2] Light emission from interface traps in SiC MOSFETs
    Stahlbush, RE
    Jernigan, GG
    [J]. PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 513 - 522
  • [3] Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels
    Gurfinkel, M.
    Kim, Jinwoo
    Potbhare, S.
    Xiong, H. D.
    Cheung, K. P.
    Suehle, J.
    Bernstein, J. B.
    Shapira, Yoram
    Lelis, A. J.
    Habersat, D.
    Goldsman, N.
    [J]. 2007 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2007, : 111 - 113
  • [4] Transient characterization of interface traps in 4H-SiC MOSFETs
    Potbhare, S.
    Goldsman, N.
    Pennington, G.
    Akturk, A.
    Lelis, A.
    [J]. SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 177 - +
  • [5] TCAD simulation of interface traps related variability in bulk decananometer MOSFETs
    Velayudhan, V.
    Martin-Martinez, J.
    Rodriguez, R.
    Porti, M.
    Medina, C.
    Nafria, M.
    Aymerich, X.
    Gamiz, F.
    [J]. 2014 5TH EUROPEAN WORKSHOP ON CMOS VARIABILITY (VARI), 2014,
  • [6] Noise and Interface Density of Traps in 4H-SiC MOSFETs
    Rumyantsev, S. L.
    Levinshtein, M. E.
    Ivanov, P. A.
    Shur, M. S.
    Palmour, J. W.
    Agarwal, A. K.
    Hull, B. A.
    Ryu, S. H.
    [J]. NOISE AND FLUCTUATIONS, 2009, 1129 : 341 - +
  • [7] Light emission from 4H SiC MOSFETs with and without NO passivation
    Stahlbush, RE
    Macfarlane, PJ
    Williams, JR
    Chung, GY
    Feldman, LC
    McDonald, K
    [J]. MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 393 - 398
  • [8] Quantified density of performance-degrading near-interface traps in SiC MOSFETs
    Mayank Chaturvedi
    Sima Dimitrijev
    Daniel Haasmann
    Hamid Amini Moghadam
    Peyush Pande
    Utkarsh Jadli
    [J]. Scientific Reports, 12 (1)
  • [9] Quantified density of performance-degrading near-interface traps in SiC MOSFETs
    Chaturvedi, Mayank
    Dimitrijev, Sima
    Haasmann, Daniel
    Moghadam, Hamid Amini
    Pande, Peyush
    Jadli, Utkarsh
    [J]. SCIENTIFIC REPORTS, 2022, 12 (01):
  • [10] Interface Traps in Silicon Carbide MOSFETs
    Cochrane, C. J.
    Lenahan, P. M.
    Lelis, A. J.
    [J]. 2008 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2008, : 68 - +
12345