Light emission from 4H SiC MOSFETs with and without NO passivation

被引：3
|
作者：
Stahlbush, RE
Macfarlane, PJ
Williams, JR
Chung, GY
Feldman, LC
McDonald, K
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[3] Sterling Semicond, Sterling, VA 20166 USA
[4] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期
关键词：
electroluminescence; SiC; NO annealing; bulk recombination; interface recombination;
D O I：
10.1016/S0167-9317(01)00674-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Images and spectra of light emission from 4H SiC MOSFETs with and without NO annealing have been studied. The emission is induced by driving the channel between accumulation and inversion. By varying the pulse train to the gate, the flow of electrons into the channel can be tracked. The electron flow in the NO-annealed MOSFEETs is an order of magnitude faster than the flow in the control MOSFETs without the anneal. Time resolved spectra allow emission processes from the interface and bulk to be separated, but do not exhibit significant differences between the MOSFETs with and without NO annealing. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：393 / 398
页数：6
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