Channel-carrier mobility parameters for 4H SiC MOSFETs

被引：27

作者：

Linewih, H ^{[1
]}

Dimitrijev, S ^{[1
]}

Cheong, KY ^{[1
]}

机构：

[1] Griffith Univ, Sch Microelect Engn, Nathan, Qld 4111, Australia

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 03期

关键词：

D O I：

10.1016/S0026-2714(02)00313-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (D-it) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：405 / 411

页数：7

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