Channel-carrier mobility parameters for 4H SiC MOSFETs

被引：27
|
作者：
Linewih, H [1 ]
Dimitrijev, S [1 ]
Cheong, KY [1 ]
机构：
[1] Griffith Univ, Sch Microelect Engn, Nathan, Qld 4111, Australia
来源：
MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 03期
关键词：
D O I：
10.1016/S0026-2714(02)00313-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (D-it) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：405 / 411
页数：7
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